Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors (Small 37/2021)

نویسندگان

چکیده

Field-Effect-Transistors Metal-semiconductor junction is an efficient structure to control the carrier concentration of channel semiconductors, benefiting regulation mobility. In article number 2102323, Lei Liao, Johnny C. Ho, Zai-xing Yang, and co-workers demonstrate that by simply constructing metal-semiconductor junctions, peak hole mobility GaSb nanowire field-effect-transistor can be enhanced highest value 3372 cm2 V−1 s−1 in atmosphere, showing three times than un-deposited one.

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ژورنال

عنوان ژورنال: Small

سال: 2021

ISSN: ['1613-6829', '1613-6810']

DOI: https://doi.org/10.1002/smll.202170190